Effects of Space-Charge Layer Widening in Junction Transistors

Early, J. (1952). Effects of Space-Charge Layer Widening in Junction Transistors. Proceedings of the IRE.

Type

Journal article

Intellectual base

Primary research

Year

1952

DOI

10.1109/jrproc.1952.273969

DOI registrant

Institute of Electrical and Electronics Engineers

Link

https://doi.org/10.1109/jrproc.1952.273969

Cited by

1 citation across 1 artifact.

Domain-specific

• Channel-Length Modulation
  • The circuit signature is analogous—current in the nominal active region varies with output voltage—but the BJT mechanism is base-width modulation, not shortening of a field-induced inversion channel

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