Ion- and electron-assisted gas-surface chemistry — an important effect in plasma etching¶
Coburn, J. W., & Winters, H. F. (1979). Ion- and electron-assisted gas-surface chemistry — an important effect in plasma etching. Journal of Applied Physics, 50(5), 3189-3196.
Cited by¶
1 citation across 1 artifact.
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Primes¶
- Selectivity Window
- An etch step must remove a silicon-dioxide layer while leaving the underlying silicon untouched; the control parameter is a process variable such as the fluorine-to-carbon ratio of the feed gas (tuned by gas mix and RF power), with a definite operating point.
This sourceFoundational study of Si/SiO2 plasma-etch selectivity; the fluorine-to-carbon ratio governs an operating window in which fluorocarbon polymer passivates silicon while oxide etches, with etch-stop (carbon-rich) and silicon-attack (fluorine-rich) as asymmetric edges.
Supported in partVerified against the publisher's abstract
The abstract establishes only that Si, SiO2 and Si3N4 react with halogen species under ion/electron bombardment; it says nothing of a fluorine-to-carbon ratio, polymer passivation, or an operating point.
“In particular, the reactions of Si, SiO2, and Si3N4 with XeF2, F2, and Cl2 are examined experimentally.”
- An etch step must remove a silicon-dioxide layer while leaving the underlying silicon untouched; the control parameter is a process variable such as the fluorine-to-carbon ratio of the feed gas (tuned by gas mix and RF power), with a definite operating point.
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Registry ID ref:91587e73a913 · see in the full table