Ion- and electron-assisted gas-surface chemistry — an important effect in plasma etching¶
Coburn, J. W., & Winters, H. F. (1979). Ion- and electron-assisted gas-surface chemistry — an important effect in plasma etching. Journal of Applied Physics, 50(5), 3189-3196.
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Primes¶
- Selectivity Window
- An etch step must remove a silicon-dioxide layer while leaving the underlying silicon untouched; the control parameter is a process variable such as the fluorine-to-carbon ratio of the feed gas (tuned by gas mix and RF power), with a definite operating point.
This sourceFoundational study of Si/SiO2 plasma-etch selectivity; the fluorine-to-carbon ratio governs an operating window in which fluorocarbon polymer passivates silicon while oxide etches, with etch-stop (carbon-rich) and silicon-attack (fluorine-rich) as asymmetric edges.
- An etch step must remove a silicon-dioxide layer while leaving the underlying silicon untouched; the control parameter is a process variable such as the fluorine-to-carbon ratio of the feed gas (tuned by gas mix and RF power), with a definite operating point.
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