CMOS VLSI Design¶
Weste, N. H. E., & Harris, D. M. (2010). CMOS VLSI Design: A Circuits and Systems Perspective. Addison-Wesley.
Cited by¶
1 citation across 1 artifact.
Each citation links to the sentence it supports in the citing article.
Domain-specific¶
- CMOS
- The historical phrase evokes a metal gate, oxide dielectric, and semiconductor, but polysilicon gates, high-
kdielectrics, metal-gate returns, silicon-on-insulator, FinFETs, and gate-all-around devices can remain within CMOS process familiesThis sourceStates the series/parallel dual-network rule for synthesising static CMOS gates that the sentence paraphrases. Covers degraded pass-transistor levels — the nMOS weak 1 and pMOS weak 0 produced by the threshold drop — and the level restoration that repairs them.
Supported in partVerified against the source
- The historical phrase evokes a metal gate, oxide dielectric, and semiconductor, but polysilicon gates, high-
Verification¶
Does it exist? Not checked yet. This entry carries no identifier to resolve. It was extracted from the citation as written in the article, normalized, and deduplicated against the rest of the registry.
Does it back the claim? Read against the text for 1 of 1 citation: 1 supported in part. Each verdict is shown under its citation below, with what in the work backs the sentence.
Support is checked per citation rather than per work — the same source can be cited soundly in one article and wrongly in another. Per-citation recording began recently, so a citation with no recorded check is a gap in the record rather than evidence it went unchecked.
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Registry ID ref:b919d8b08efa · see in the full table