Grain Boundaries in Polycrystalline Silicon¶
Seager. (1985). Grain Boundaries in Polycrystalline Silicon. Annual Review of Materials Research.
Cited by¶
1 citation across 1 artifact.
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Domain-specific¶
- Grain Boundary
- Metallurgy and alloy design — Hall–Petch hardening, recrystallization, grain growth, and twin / special boundaries as the primary levers on strength. Semiconductor physics — grain boundaries in polysilicon acting as carrier-recombination sites that limit solar-cell efficiency
This sourceGrain boundaries in polycrystalline silicon as electrically active recombination and trapping centres that degrade carrier transport.
- Metallurgy and alloy design — Hall–Petch hardening, recrystallization, grain growth, and twin / special boundaries as the primary levers on strength. Semiconductor physics — grain boundaries in polysilicon acting as carrier-recombination sites that limit solar-cell efficiency
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