Introduction to Solid State Physics

Kittel, C. (2005). Introduction to Solid State Physics. Wiley.

Type

Book chapter

Intellectual base

Textbook

Year

2005

ISBN

9780471415268

Link

https://www.wiley.com/en-us/Introduction+to+Solid+State+Physics,+8th+Edition-p-9780471415268

Cited from

chemistry_materials

Cited by

3 citations across 3 artifacts.

Each citation links to the sentence it supports in the citing article.

Primes

• Defect
  • In materials and solid-state physics, the origin substrate, vacancies, interstitials, substitutional defects, dislocations, grain boundaries, and stacking faults govern macroscopic behaviour; semiconductor doping is deliberate substitutional-defect engineering, metal strength is dislocation engineering, light-emitting diodes are recombination-centre engineering, and superconductors require pinning centres for high current.

    This sourceStandard reference establishing that crystal point defects, dislocations, and grain boundaries govern macroscopic properties (conductivity, strength), and that semiconductor doping is deliberate defect engineering.

Domain-specific

• Debye Model
  • These asymptotes correct the Einstein model’s exponentially small low-temperature prediction while retaining the classical Dulong–Petit limit.
• Effective Mass (Solid-State Physics)
  • The correction is not to change the bare electron mass but to enrich the band surrogate.

Verification

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