Operation and Modeling of the MOS Transistor¶
Tsividis, Y., & McAndrew, C. (2011). Operation and Modeling of the MOS Transistor. Oxford University Press.
Cited by¶
1 citation across 1 artifact.
Each citation links to the sentence it supports in the citing article.
Domain-specific¶
- Channel-Length Modulation
- Modern short-channel devices require richer models because drain-induced barrier lowering, velocity saturation, mobility effects, self-heating, and quasi-ballistic transport can contribute to the same measured output conductance
This sourceTsividis and McAndrew treat velocity saturation, channel-length modulation, DIBL and mobility as separate small-dimension effects to be combined in one model rather than lumped into lambda (§§4.11, 5.2, 5.3, 5.5, 5.7); self-heating and quasi-ballistic transport are not carried by this text.
Supported in partVerified against the source
- Modern short-channel devices require richer models because drain-induced barrier lowering, velocity saturation, mobility effects, self-heating, and quasi-ballistic transport can contribute to the same measured output conductance
Verification¶
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Registry ID ref:ed352abd63af · see in the full table