Fundamentals of Modern VLSI Devices¶
Taur, Y., & Ning, T. H. (2009). Fundamentals of Modern VLSI Devices. Cambridge University Press.
Cited by¶
1 citation across 1 artifact.
Each citation links to the sentence it supports in the citing article.
Domain-specific¶
- Channel-Length Modulation
- DIBL describes drain-field reduction of the source-channel injection barrier or threshold voltage, especially in short-channel devices and weak inversion
This sourceTaur and Ning's short-channel-effect treatment (§3.2.1, with the subthreshold characteristics of §3.1.3 and the weak-inversion analysis of Appendix 9) is the standard statement of this physics: the drain field lowers the source-end barrier, appearing as threshold roll-off and excess subthreshold current in short devices.
SupportedVerified against the source
- DIBL describes drain-field reduction of the source-channel injection barrier or threshold voltage, especially in short-channel devices and weak inversion
Verification¶
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Registry ID ref:ff976fa00d32 · see in the full table